Active Junction Temperature Control of IGBT Based on Adjusting the Turn-off Trajectory

被引:45
作者
Wang, Bo [1 ]
Zhou, Luowei [1 ]
Zhang, Yi [1 ]
Wang, Kaihong [1 ]
Du, Xiong [1 ]
Sun, Pengju [1 ]
机构
[1] Chongqing Univ, State Key Lab Power Transmiss Equipment & Syst Se, Sch Elect Engn, Chongqing 400044, Peoples R China
关键词
Insulated-gate bipolar transistor (IGBT); smoothing ability; smoothing junction temperature; turn-off trajectory;
D O I
10.1109/TPEL.2017.2749383
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The junction temperature fluctuation of an insulated-gate bipolar transistor (IGBT) is the most important factor of its aging failure, and smoothing the fluctuation is an effective way to improve the life of an IGBT. The existing methods for smoothing the fluctuation by active junction temperature control are not yet ready wide application, and exploring the different approaches to active junction temperature control is a hot topic. This paper presents amethod of active junction temperature control that shifts the turn-off trajectory of an IGBT to adjust the IGBT turn-off loss for smoothing the junction temperature. The relationship between parameters of the adjusting circuit and turn-off loss is analyzed. On the basis of this analysis, a method of estimating the smoothing ability for the proposed active junction temperature control is deduced. Using an IGBT installed in a 1.2-MW direct-drive wind power converter as an example, the evaluation result shows that the proposed method can completely smooth the junction temperature fluctuation caused by a 40% rated load fluctuation. Finally, a low-power experiment is carried out.
引用
收藏
页码:5811 / 5823
页数:13
相关论文
共 24 条
[1]   Thermal Stress Analysis and MPPT Optimization of Photovoltaic Systems [J].
Andresen, Markus ;
Buticchi, Giampaolo ;
Liserre, Marco .
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 2016, 63 (08) :4889-4898
[2]  
[Anonymous], 2009, P 13 EUR C POW EL AP
[3]  
[Anonymous], 2011, P 2011 14 EUROPEAN C
[4]  
Bayerer R., 2008, 5 INT C INT POW EL S, P1
[5]   CIRCUIT TECHNIQUES FOR IMPROVING SWITCHING LOCI OF TRANSISTOR SWITCHES IN SWITCHING REGULATORS [J].
CALKIN, ET ;
HAMILTON, BH .
IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, 1976, 12 (04) :364-369
[6]   Selected failure mechanisms of modern power modules [J].
Ciappa, M .
MICROELECTRONICS RELIABILITY, 2002, 42 (4-5) :653-667
[7]  
[杜雄 Du Xiong], 2015, [中国电机工程学报, Proceedings of the Chinese Society of Electrical Engineering], V35, P6152
[8]  
Falck J, 2015, IEEE IND ELEC, P1
[9]   Modulation Methods for Neutral-Point-Clamped Wind Power Converter Achieving Loss and Thermal Redistribution Under Low-Voltage Ride-Through [J].
Ma, Ke ;
Blaabjerg, Frede .
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 2014, 61 (02) :835-845
[10]   Reactive Power Influence on the Thermal Cycling of Multi-MW Wind Power Inverter [J].
Ma, Ke ;
Liserre, Marco ;
Blaabjerg, Frede .
IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, 2013, 49 (02) :922-930