Role of atomic arrangements at interfaces on the phase control of epitaxial TiO2 films

被引：29

作者：

Park, BH ^{[1
]}

Huang, JY ^{[1
]}

Li, LS ^{[1
]}

Jia, QX ^{[1
]}

机构：

[1] Los Alamos Natl Lab, Superconduct Technol Ctr, Los Alamos, NM 87545 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 07期

关键词：

D O I：

10.1063/1.1450249

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial rutile-TiO2 and anatase-TiO2 films were grown at 800 degreesC on Al2O3((1) over bar 10 (2) over bar) and LaAlO3(001), respectively, using pulsed laser deposition. Both films showed high crystalline quality, evidenced by x-ray diffraction and high-resolution electron microscopy. The formation of different phases on different substrates could be qualitatively explained by the atomic arrangements at the interfaces. We also deposited epitaxial rutile-TiO2 and anatase-TiO2 films on conductive RuO2 and La0.5Sr0.5CoO3 electrodes, respectively. Using a Kelvin probe, we measured the photovoltaic properties of these multilayer structures. A rutile-TiO2 film grown on RuO2 showed a very broad peak in the visible light region. An epitaxial anatase-TiO2 film grown on La0.5Sr0.5CoO3 showed a strong peak with a threshold energy of 3.05 eV. (C) 2002 American Institute of Physics.

引用

页码：1174 / 1176

页数：3

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