Improved mobility of amorphous silicon thin-film transistors deposited by hot-wire chemical vapor deposition on glass substrates

High quality thin-film transistors (TFTs) with hydrogenated amorphous silicon, a-Si:H, deposited by hot-wire chemical vapor deposition as the active layer at growth rates above 20 A/s, have been prepared using a standard, low-temperature process on glass substrates . These TFTs show a switching ratio above 3 x 10(6), a threshold voltage of 6 V, a subthreshold slope of 1.7 V/decade, and a field effect mobility of 0.1 cm(2) V-1 s(-1). (C) 1997 American Institute of Physics.