GaAs photonic crystal cavity with ultrahigh Q:: microwatt nonlinearity at 1.55 μm

被引：93

作者：

Combrie, Sylvain ^{[1
]}

De Rossi, Alfredo ^{[1
]}

Tran, Quynh Vy ^{[1
]}

Benisty, Henri ^{[2
]}

机构：

[1] Thales Res & Technol, F-91767 Palaiseau, France

[2] CNRS, Lab Charles Fabry, Inst Opt, Grad Sch, F-91767 Palaiseau, France

来源：

OPTICS LETTERS | 2008年 / 33卷 / 16期

关键词：

D O I：

10.1364/OL.33.001908

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We haves realized and measured a GaAs nanocavity in a slab photonic crystal based on the design by Kuramochi et al. [Appl. Phys. Lett. 88, 041112 (2006)]. We measure a quality factor Q=700,000, which proves that ultrahigh Q nanocavities are also feasible in GaAs. We show that owing to larger two-photon absorption in GaAs nonlinearities appear at the microwatt level and will be more functional in gallium arsenide than in silicon nanocavities. (C) 2008 Optical Society of America.

引用

页码：1908 / 1910

页数：3

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