Transparent conducting properties of Ni doped zinc oxide thin films prepared by a facile spray pyrolysis technique using perfume atomizer

被引:50
作者
Bouaoud, A. [1 ]
Rmili, A. [1 ]
Ouachtari, E. [1 ]
Louardi, A. [1 ]
Chtouki, T. [1 ]
Elidrissi, B. [1 ]
Erguig, H. [1 ]
机构
[1] Fac Sci, Dept Phys, Equipe Ingn & Mat INMA, LHESIR, Kenitra, Morocco
关键词
Thin films; Semiconductors; Optical properties; Electrical properties; OPTICAL-PROPERTIES; DEPOSITION; GROWTH;
D O I
10.1016/j.matchemphys.2012.10.023
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Undoped and Ni doped zinc oxide (Ni-ZnO) thin films were prepared by a facile spray pyrolysis technique using perfume atomizer from aqueous solution of anhydrous zinc acetate (Zn(CH3COOH)(2) and hexahydrated nickel chloride (NiCl2 center dot 6H(2)O) as sources of zinc and nickel, respectively. The films were deposited onto the amorphous glass substrates kept at (450 degrees C). The effect of the [Ni]/[Zn] ratio on the structural, morphological, optical and electrical properties of Ni doped ZnO thin film was studied. It was found from X-ray diffraction (XRD) analysis that both the undoped and Ni doped ZnO films were crystallized in the hexagonal structure with a preferred orientation of the crystallites along the [002] direction perpendicular to the substrate. The scanning electron microscopy (SEM) images showed a relatively dense surface structure composed of crystallites in the spherical form whose average size decreases when the [Ni]/[Zn] ratio increases. The optical study showed that all the films were highly transparent. The optical transmittance in the visible region varied between 75 and 85%, depending on the dopant concentrations. The variation of the band gap versus the [Ni]/[Zn] ratio showed that the energy gap decreases from 2.95 to 2.72 eV as the [Ni]/[Zn] ratio increases from 0 to 0.02 and then increases to reach 3.22 eV for [Ni]/[Zn] = 0.04. The films obtained with the [Ni]/[Zn] ratio = 0.02 showed minimum resistivity of 2 x 10(-3) Omega cm at room temperature. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码:843 / 847
页数:5
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