Shallow donors in the triple-graded quantum well under the hydrostatic pressure and external fields

被引：10

作者：

Kasapoglu, E ^{[1
]}

Sari, H

Sökmen, I

机构：

[1] Cumhuriyet Univ, Dept Phys, TR-58140 Sivas, Turkey

[2] Dokuz Eylul Univ, Dept Phys, Izmir, Turkey

来源：

PHYSICA B-CONDENSED MATTER | 2006年 / 373卷 / 02期

关键词：

triple quantum wells; hydrogenic impurities; graded well; hydrostatic pressure;

D O I：

10.1016/j.physb.2005.11.155

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The binding energy of the donor in the triple-graded GaAs-(Ga,Al)As quantum well under the hydrostatic pressure, electric and magnetic fields are calculated by using a variational approach. The results have been obtained in the presence of hydrostatic pressure, magnetic and electric fields applied along the growth direction as a function of the impurity position without consideration of a mass mismatch or dielectric mismatch. (c) 2005 Elsevier B.V. All rights reserved.

引用

收藏

页码：280 / 283

页数：4

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