Silicon-on-insulator (SOI) nanobeam optical cavities for refractive index based sensing

被引：5
作者：
Rahman, M. Ghazali A. [1 ]
Velha, Philippe [1 ]
De La Rue, Richard M. [1 ]
Johnson, Nigel P. [1 ]
机构：
[1] Univ Glasgow, Sch Engn, Optoelect Res Grp, Glasgow G12 8LY, Lanark, Scotland
来源：
OPTICAL SENSING AND DETECTION II | 2012年 / 8439卷
关键词：
Photonic Crystal; Nanobeam; cavities; refractive index sensing; SOI;
D O I：
10.1117/12.922554
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present the design modelling and fabrication of Silicon-On-Insulator (SOI) nanobeam cavities that are immersed in a microfluidic system for refractive index sensing. The device has sensitivity value of greater than 200 nm/RIU with a Q-factor more than 20 000 in water. It was fabricated on a SOI platform and working at telecom wavelengths. The use of the SOI platform also offers further possibilities of integration with CMOS technologies.
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页数：6
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