3.7 kV Vertical GaN PN Diodes

被引：117

作者：

Kizilyalli, Isik C. ^{[1
]}

Edwards, Andrew P. ^{[1
]}

Nie, Hui ^{[1
]}

Bour, Dave ^{[1
]}

Prunty, Thomas ^{[1
]}

Disney, Don ^{[1
]}

机构：

[1] Avogy Inc, San Jose, CA 95134 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2014年 / 35卷 / 02期

关键词：

Gallium nitride; power-semiconductor devices; avalanche breakdown; power diodes; BREAKDOWN VOLTAGE; ALGAN/GAN HEMTS; POWER; TERMINATION;

D O I：

10.1109/LED.2013.2294175

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

There is a great interest in wide band-gap semiconductor devices for power electronics application. In this letter, vertical GaN p-n diodes fabricated on bulk GaN substrates are discussed. The device layers are grown by MOCVD on low defect density (10(4) cm(-2)) bulk GaN substrates. The measured devices show breakdown voltages of 3.7 kV with an area differential specific on-resistance (R-sp) of 2.95 m Omega-cm(2).

引用

收藏

页码：247 / 249

页数：3

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