Interfacial layer in homoepitaxial InP grown by organometallic vapor phase epitaxy with TmIn and TBP

被引：0
|
作者：
Nakata, H [1 ]
Satoh, K [1 ]
Ohyama, T [1 ]
Fujiwara, Y [1 ]
Nonogaki, Y [1 ]
Takeda, Y [1 ]
机构：
[1] NAGOYA UNIV,SCH ENGN,DEPT MAT SCI & ENGN,CHIKUSA KU,NAGOYA,AICHI 46401,JAPAN
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1996年 / 25卷 / 04期
关键词：
far-infrared; InP; interfacial layer; photoluminescence;
D O I：
10.1007/BF02666512
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effects of interfacial layers with high impurity concentration on the properties of homoepitaxial InP layers have been studied by far-infrared (FIR) magnetoabsorption, in addition to de mobility, Hall effect, and photoluminescence (PL) measurements. The layers are grown by organometallic vapor phase epitaxy with trimethylindium and tertiarybutylphosphine. Impurity absorption as well as cyclotron resonance is observed in the FIR measurements. Variations in the intensity of the resonance signals and the mobilities obtained from the linewidths of the cyclotron resonance are interpreted by a double layer model, i.e. a bulk layer with an interfacial layer. Carrier concentrations, de mobilities, and PL intensities of both bound excitons and free excitons are also explained by the model.
引用
收藏
页码：611 / 617
页数：7
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