Influence of radiative and non-radiative recombination on the minority carrier lifetime in midwave infrared InAs/InAsSb superlattices

被引：107

作者：

Hoeglund, L. ^{[1
]}

Ting, D. Z. ^{[1
]}

Khoshakhlagh, A. ^{[1
]}

Soibel, A. ^{[1
]}

Hill, C. J. ^{[1
]}

Fisher, A. ^{[1
]}

Keo, S. ^{[1
]}

Gunapala, S. D. ^{[1
]}

机构：

[1] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 22期

基金：

美国国家航空航天局;

关键词：

HGCDTE; GAAS;

D O I：

10.1063/1.4835055

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Optical modulation response is used to study the influence of radiative, Shockley-Read-Hall, and Auger recombination processes on the minority carrier lifetime in a mid-wave infrared InAs/InAsSb superlattice. A comparison of calculated and measured temperature dependencies shows that the lifetime is influenced mainly by radiative recombination at low temperatures, resulting in an increase of the minority carrier lifetime from 1.8 mu s at 77K to 2.8 mu s at 200 K. At temperatures above 200 K, Auger recombination increases rapidly and limits the lifetime. Shockley-Read-Hall limited lifetimes on the order of 10 mu s are predicted for superlattices with lower background doping concentration. (C) 2013 AIP Publishing LLC.

引用

页数：5

共 18 条

[1] ULTRALONG MINORITY-CARRIER LIFETIME EPITAXIAL GAAS BY PHOTON RECYCLING [J].