Low Vπ Silicon photonics modulators with highly linear epitaxially grown phase shifters

被引：73

作者：

Azadeh, Saeed Sharif ^{[1
,3
]}

Merget, Florian ^{[1
,3
]}

Romero-Garcia, Sebastian ^{[1
,3
]}

Moscoso-Martir, Alvaro ^{[3
]}

von den Driesch, Nils ^{[2
,3
]}

Mueller, Juliana ^{[1
,3
]}

Mantl, Siegfried ^{[2
,3
]}

Buca, Dan ^{[2
,3
]}

Witzens, Jeremy ^{[1
,3
]}

机构：

[1] Rhein Westfal TH Aachen, Inst Integrated Photon IPH, D-52074 Aachen, Germany

[2] Forschungszentrum Julich, Peter Grunberg Inst 9, D-52425 Julich, Germany

[3] Julich Aachen Res Alliance, JARA Fundamentals Future Informat Technol, Aachen, Germany

来源：

OPTICS EXPRESS | 2015年 / 23卷 / 18期

基金：

欧洲研究理事会;

关键词：

OPTICAL MODULATOR;

D O I：

10.1364/OE.23.023526

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report on the design of Silicon Mach-Zehnder carrier depletion modulators relying on epitaxially grown vertical junction diodes. Unprecedented spatial control over doping profiles resulting from combining local ion implantation with epitaxial overgrowth enables highly linear phase shifters with high modulation efficiency and comparatively low insertion losses. A high average phase shifter efficiency of V pi L = 0.74 Vu cm is reached between 0 V and 2 V reverse bias, while maintaining optical losses at 4.2 dB/mm and the intrinsic RC cutoff frequency at 48 GHz (both at 1 V reverse bias). The fabrication process, the sensitivity to fabrication tolerances, the phase shifter performance and examples of lumped element and travelling wave modulators are modeled in detail. Device linearity is shown to be sufficient to support complex modulation formats such as 16-QAM. (C) 2015 Optical Society of America

引用

页码：23526 / 23550

页数：25

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