Superconducting characteristics of a MgB2 neutron detector fabricated on SiN membrane

被引:5
作者
Miki, S
Fujiwara, D
Shimakage, H
Wang, Z
Satoh, K
Yotsuya, T
Ishida, T
机构
[1] Osaka Prefecture Univ, Dept Phys & Elect, Sakai, Osaka 5998531, Japan
[2] Japan Sci & Technol Agcy, Kawaguchi, Saitama 3320012, Japan
[3] Natl Inst Informat & Commun Technol, Kansai Adv Res Ctr, Nishi Ku, Kobe, Hyogo 6512429, Japan
[4] Technol Res Inst Osaka Prefecture, Osaka 5941157, Japan
关键词
MgB2 thin films; neutron detector; superconducting detector; membrane structure;
D O I
10.1016/j.nima.2005.12.130
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
We report a fabrication process for membrane-structured superconducting MgB2 neutron detectors and measurement of superconducting DC-characteristics. We prepared a MgB2 thin film on a SiN-film-coated Si substrate using multiple-target sputtering system. The 200-nm-thick MgB2 thin film was processed to create meandering lines by e-beam lithography technique, where the line width was 3 mu m and the total length reached 6.3 mm. After the front side of the device had been fabricated, the back side of the device was etched with anisotropic Si etching using ethylene diamine pyrocatechol and etching apparatus to increase the sensitivity of the device. The membrane-structured MgB2 device showed good performance of the transition to Superconductivity, namely, a T-C.onset of 26.24 K, a T-C.offset of 26.02 K, Delta T-c of 0.22 K, and an RRR of 1.15. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:763 / 765
页数:3
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