Organic nonvolatile resistive memory devices based on thermally deposited Au nanoparticle

被引：37

作者：

Jin, Zhiwen ^{[1
,2
]}

Liu, Guo ^{[1
,2
]}

Wang, Jizheng ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Chem, CAS Key Lab Organ Solids, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China

[2] Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China

来源：

AIP ADVANCES | 2013年 / 3卷 / 05期

基金：

中国国家自然科学基金;

关键词：

THIN-FILMS; POLYMER;

D O I：

10.1063/1.4804948

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Uniform Au nanoparticles (NPs) are formed by thermally depositing nominal 2-nm thick Au film on a 10-nm thick polyimide film formed on a Al electrode, and then covered by a thin polymer semiconductor film, which acts as an energy barrier for electrons to be injected from the other Al electrode (on top of polymer film) into the Au NPs, which are energetically electron traps in such a resistive random access memory (RRAM) device. The Au NPs based RRAM device exhibits estimated retention time of 10(4) s, cycle times of more than 100, and ON-OFF ratio of 10(2) to 10(3). The carrier transport properties are also analyzed by fitting the measured I-V curves with several conduction models. (C) 2013 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

引用

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