Thermal decomposition of ZrO2/SiO2 bilayer on Si(001) caused by void nucleation and its lateral growth

被引：46

作者：

Watanabe, H ^{[1
]}

Ikarashi, N ^{[1
]}

机构：

[1] NEC Corp Ltd, Silicon Syst Res Labs, Kanagawa 2291198, Japan

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 04期

关键词：

D O I：

10.1063/1.1435810

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The stability of a ZrO2/SiO2 bilayer on a Si(001) substrate was investigated in terms of thermal decomposition during ultrahigh-vacuum annealing. In spite of the intrinsic thermal stability of the ZrO2/SiO2 system, void nucleation initiated by local defects and the following lateral growth of the voids proceed at temperatures over 900 degreesC. The remaining Zr atoms accumulate and react with the Si substrate to form silicide (ZrSi2) islands within the voids. It was found that the decomposition temperature of the ZrO2/SiO2 bilayer is lower than that of a SiO2 single layer, which suggests defect generation in the SiO2 underlayer by ZrO2 deposition. (C) 2002 American Institute of Physics.

引用

页码：559 / 561

页数：3