The Effect of Surface Morphology to Photoluminescence Spectrum Porous Silicon

被引:0
|
作者
Suhaimi, M. H. Fadzilah [1 ]
Zubaidah, M. Ain [1 ]
Yusop, S. F. M. [1 ]
Rusop, M. [1 ]
Abdullah, S. [1 ]
机构
[1] Univ Teknol MARA UiTM, NANOsciTech Ctr NST, Inst Sci, Shah Alam 40450, Selangor, Malaysia
来源
2012 10TH IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS (ICSE) | 2012年
关键词
LAYER;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The porous silicon nanostructures was prepared by electrochemical etching of p-type silicon wafer. Porous silicon structure has good mechanical robustness, chemical stability, and compatibility with existing silicon technology. Therefore, it also has a wide area of potential applications such as waveguides, 1D photonic crystals, chemical sensors, biological sensor etc. Photoluminescences characteristics of porous silicon depend on their morphology because the size and distribution of pore its self will effect to their exciton energy level. The structure of porous silicon controlled by the parameters used during the experiment which know as experimental factor. These factors such as etching time, current density applied, temperature, doping concentration etc play an important role during the formation of porous. It will effect either to the thickness or porosity of sample. In this work, we select one of that factor to corellate which optical properties of porous silicon. We investigated the surface morphology by using Atomic Force Microscope (AFM) and photoluminescences using Photoluminescences (PL) spectrometer.
引用
收藏
页码:149 / 152
页数:4
相关论文
共 50 条
  • [1] PHOTOLUMINESCENCE AND SURFACE MORPHOLOGY OF NANOSTRUCTURED POROUS SILICON
    Dubey, R. S.
    Gautam, D. K.
    CHALCOGENIDE LETTERS, 2009, 6 (10): : 523 - 528
  • [2] Effect of Electrochemical Reaction Environment on the Surface Morphology and Photoluminescence of Porous Silicon
    Syari'ati, Ali
    Suendo, Veinardi
    NANOTECHNOLOGY APPLICATIONS IN ENERGY AND ENVIRONMENT, 2013, 737 : 60 - 66
  • [3] Photoacoustic spectrum and surface morphology of porous silicon
    Kawahara, Toshio
    Mihara, Michiyo
    Morimoto, Jun
    Miyakawa, Toru
    1998, JJAP, Tokyo, Japan (37):
  • [4] Photoacoustic spectrum and surface morphology of porous silicon
    Kawahara, T
    Mihara, M
    Morimoto, J
    Miyakawa, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (5B): : 2823 - 2826
  • [5] THE EFFECT OF SURFACE SPECIES ON THE PHOTOLUMINESCENCE OF POROUS SILICON
    LI, KH
    TSAI, C
    CAMPBELL, JC
    KOVAR, M
    WHITE, JM
    JOURNAL OF ELECTRONIC MATERIALS, 1994, 23 (04) : 409 - 412
  • [6] The effect of oxidation on the efficiency and spectrum of photoluminescence of porous silicon
    Bulakh, B. M.
    Korsunska, N. E.
    Khomenkova, L. Yu.
    Staraya, T. R.
    Sheinkman, M. K.
    SEMICONDUCTORS, 2006, 40 (05) : 598 - 604
  • [7] Effect of contact with air on the photoluminescence spectrum of porous silicon
    Agekyan, VF
    Aprelev, AM
    Laiho, R
    Stepanov, YA
    PHYSICS OF THE SOLID STATE, 2000, 42 (08) : 1431 - 1434
  • [8] Effect of contact with air on the photoluminescence spectrum of porous silicon
    V. F. Agekyan
    A. M. Aprelev
    R. Laiho
    Yu. A. Stepanov
    Physics of the Solid State, 2000, 42 : 1431 - 1434
  • [9] The effect of oxidation on the efficiency and spectrum of photoluminescence of porous silicon
    B. M. Bulakh
    N. E. Korsunska
    L. Yu. Khomenkova
    T. R. Staraya
    M. K. Sheĭnkman
    Semiconductors, 2006, 40 : 598 - 604
  • [10] The Effect of Argon Ion Irradiation Parameters on the Photoluminescence Spectrum of Porous Silicon
    Kozhemiako, A., V
    Evseev, A. P.
    Spivak, Yu M.
    Muratova, E. N.
    Balakshin, Yu, V
    Nazarov, A., V
    Shemukhin, A. A.
    Chernysh, V. S.
    MOSCOW UNIVERSITY PHYSICS BULLETIN, 2020, 75 (05) : 465 - 468