Study on magnetoresistance and stability for [Py/Cu/Co/Cu](N) spin valve multilayered films

被引：0

作者：

Fang, RY ^{[1
]}

Chen, TY ^{[1
]}

Wan, H ^{[1
]}

Dai, DS ^{[1
]}

机构：

[1] HONEYWELL INC,SOLID STATE ELECT CTR,PLYMOUTH,MN 55441

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1997年 / 33卷 / 05期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1109/20.619501

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The spin valve [NiFe/Cu/Co/Cu] multilayers were prepared by using electron beam method. The influences of the thickness of magnetic and non-magnetic layers, preparation process on the magnetoresistance (MR) were studied. We also investigated the stability of MR and how to reduce the center field Ho, which is the center magnetic field of the linear region in the MR - H curve. Using fairly optimum preparing technology, we have deposited many samples with low center field Ho in the range 10 - 20 Oe, the MR merit is larger than 0.2%/Oe. The variation of the MR in this linear region is reversible during repeatedly magnetizing. The change of MR is smaller than 1% for several samples after aging one year in a dry air chamber and room temperature.

引用

页码：3571 / 3573

页数：3