Role of oxygen vacancies in TiO2-based resistive switches

被引：28

作者：

Gu, Tingkun ^{[1
]}

机构：

[1] Shandong Univ, Sch Elect Engn, Jinan 250061, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2013年 / 113卷 / 03期

基金：

中国国家自然科学基金;

关键词：

TOTAL-ENERGY CALCULATIONS;

D O I：

10.1063/1.4779767

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of oxygen vacancies in TiO2 on the electronic properties of Pt/TiO2/Pt heterojunctions were investigated using first-principles methods. The arrangement of oxygen vacancies in TiO2 slabs is a crucial factor for conducting filament formation. Extended defect induced by the aligned neutral oxygen vacancies results in defect states being located at the Fermi level of the Pt electrodes in Pt/TiO2/Pt heterostructures, and produces a conducting filament connecting two Pt electrodes in the TiO2 film via the oxygen-deficient Ti ions. As oxygen vacancies in intrinsic state, the O-deficient Ti ions, which remain in a high valence state, like those in perfect TiO2, do not contribute to the conducting filament formation. Electronic structure analysis suggests that metallic filament formation in Pt/TiO2/Pt resistive switching cells might be closely related to the charge state and the arrangement of oxygen vacancies in TiO2 films. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4779767]

引用

页数：7

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