Hydrogen Sensing Properties of Thin NiO Films Deposited by RF Sputtering

被引：24

作者：

Guziewicz, M. ^{[1
]}

Klata, P. ^{[1
]}

Grochowski, J. ^{[1
]}

Golaszewska, K. ^{[1
]}

Kaminska, E. ^{[1
]}

Domagala, J. Z. ^{[1
,2
]}

Witkowski, B. A. ^{[2
]}

Kandyla, M. ^{[3
]}

Chatzimanolis, Ch. ^{[4
]}

Kompitsas, M. ^{[3
]}

Piotrowska, A. ^{[1
]}

机构：

[1] Inst Electr Mat Technol, PL-02668 Warsaw, Poland

[2] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

[3] Natl Hellen Res Fdn, LATA Lab, Athens 11635, Greece

[4] Natl Tech Univ Athens, Sch Chem Engn, Athens 15780, Greece

来源：

26TH EUROPEAN CONFERENCE ON SOLID-STATE TRANSDUCERS, EUROSENSOR 2012 | 2012年 / 47卷

关键词：

Nickel Oxide; hydrogen sensors; semiconductor; Pd nanoparticles;

D O I：

10.1016/j.proeng.2012.09.255

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electrical properties of p-NiO films fabricated by RF magnetron sputtering were studied for hydrogen sensor applications. A response of sheet resistance to hydrogen concentration in air has been measured at elevated temperature. Significant changes in sheet resistance of NiO films were observed even for H-2 concentration of a few ppm in air. The sensibility of NiO films to hydrogen trace was further increased by Pd clusters deposited on the NiO surface. The best sensibility result achieved on the NiO film was: 0.3 ppm of H-2 in air at 145 degrees C. (C) 2012 Published by Elsevier Ltd.....Selection and/or peer-review under responsibility of the Symposium Cracoviense Sp. z.o.o.

引用

页码：746 / 749

页数：4

共 6 条

[1] Metal oxide-based gas sensor research: How to? [J].