Enhanced thermoelectric performance of Bi2S3 by synergistical action of bromine substitution and copper nanoparticles

被引:92
作者
Liu, Zihang [1 ,2 ]
Pei, Yanling [3 ]
Geng, Huiyuan [4 ]
Zhou, Jingchao [1 ,2 ]
Meng, Xianfu [1 ,2 ]
Cai, Wei [1 ,2 ]
Liu, Weishu [5 ]
Sui, Jiehe [1 ,2 ]
机构
[1] Harbin Inst Technol, Natl Key Lab Precis Hot Proc Met, Harbin 150001, Peoples R China
[2] Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R China
[3] Beihang Univ, Sch Mat Sci & Engn, Beijing 100191, Peoples R China
[4] Harbin Inst Technol, State Key Lab Adv Welding & Joining, Harbin 150001, Peoples R China
[5] Univ Houston, Dept Phys, Houston, TX 77204 USA
基金
中国国家自然科学基金;
关键词
Bi2S3; Doping; Nanoparticles; Thermoelectric properties; FIGURE-OF-MERIT; THERMAL-CONDUCTIVITY; TRANSPORT;
D O I
10.1016/j.nanoen.2015.03.036
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Bi2S3 thermoelectric materials have received extensive interests due to the ultrahigh abundance of sulfur element in the Earth's crust. However, the high electrical resistivity of pristine Bi2S3 leads to a low ZT value. In this work, incorporating small amounts of CuBr2 into Bi2S3 system prepared by melting and spark plasma sintering can remarkably enhance the thermoelectric performance. Cu intercalation and Br substitution at sulfur sites contribute to a sharp decrease of electrical resistivity. Simultaneously, the strong point defects caused by Br alloying and formed Cu nanoparticles noticeably suppress the thermal conductivity. Collectively, the maximum ZT of 0.72 at 773 K is obtained for the 0.5 mol% CuBr2 doped sample parallel to the press direction, which is the highest ZT value ever reported for Bi2S3 system, even comparable to the PbS-based thermoelectric materials. (C) 2015 Elsevier Ltd. All rights reserved.
引用
收藏
页码:554 / 562
页数:9
相关论文
共 56 条
[1]   High-performance bulk thermoelectrics with all-scale hierarchical architectures [J].
Biswas, Kanishka ;
He, Jiaqing ;
Blum, Ivan D. ;
Wu, Chun-I ;
Hogan, Timothy P. ;
Seidman, David N. ;
Dravid, Vinayak P. ;
Kanatzidis, Mercouri G. .
NATURE, 2012, 489 (7416) :414-418
[2]   Tellurium-Free Thermoelectric: The Anisotropic n-Type Semiconductor Bi2S3 [J].
Biswas, Kanishka ;
Zhao, Li-Dong ;
Kanatzidis, Mercouri G. .
ADVANCED ENERGY MATERIALS, 2012, 2 (06) :634-638
[3]   Size-dependent transport and thermoelectric properties of individual polycrystalline bismuth nanowires [J].
Boukai, A ;
Xu, K ;
Heath, JR .
ADVANCED MATERIALS, 2006, 18 (07) :864-+
[4]   INELASTIC SCATTERING OF ELECTRONS IN GERMANIUM [J].
CALLAWAY, J ;
CUMMINGS, FW .
PHYSICAL REVIEW, 1962, 126 (01) :5-&
[5]   Transport properties,of Bi2S3 and the ternary bismuth sulfides KBi6.33S10 and K2Bi8S13 [J].
Chen, BX ;
Uher, C ;
Iordanidis, L ;
Kanatzidis, MG .
CHEMISTRY OF MATERIALS, 1997, 9 (07) :1655-1658
[6]   Recent progress of half-Heusler for moderate temperature thermoelectric applications [J].
Chen, Shuo ;
Ren, Zhifeng .
MATERIALS TODAY, 2013, 16 (10) :387-395
[7]   Approaching the Minimum Thermal Conductivity in Rhenium-Substituted Higher Manganese Silicides [J].
Chen, Xi ;
Girard, Steven N. ;
Meng, Fei ;
Lara-Curzio, Edgar ;
Jin, Song ;
Goodenough, John B. ;
Zhou, Jianshi ;
Shi, Li .
ADVANCED ENERGY MATERIALS, 2014, 4 (14)
[8]   Nanostructured Bi2-xCuxS3 bulk materials with enhanced thermoelectric performance [J].
Ge, Zhen-Hua ;
Zhang, Bo-Ping ;
Liu, Yong ;
Li, Jing-Feng .
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2012, 14 (13) :4475-4481
[9]   Control of anisotropic electrical transport property of Bi2S3 thermoelectric polycrystals [J].
Ge, Zhen-Hua ;
Zhang, Bo-Ping ;
Shang, Peng-Peng ;
Li, Jing-Feng .
JOURNAL OF MATERIALS CHEMISTRY, 2011, 21 (25) :9194-9200
[10]   Transport and thermoelectric properties in Copper intercalated TiS2 chalcogenide [J].
Guilmeau, E. ;
Breard, Y. ;
Maignan, A. .
APPLIED PHYSICS LETTERS, 2011, 99 (05)