TSV Electrical and Mechanical Modeling for Thermo-Mechanical Delamination

被引：0

作者：

Kannan, Kaushal ^{[1
]}

Kannan, Sukeshwar ^{[1
]}

Kim, Bruce ^{[1
]}

Sitaraman, Suresh ^{[2
]}

Burkett, Susan ^{[1
]}

机构：

[1] Univ Alabama, Tuscaloosa, AL 35401 USA

[2] Georgia Inst Technol, Atlanta, GA 30332 USA

来源：

2013 IEEE 63RD ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC) | 2013年

关键词：

THROUGH-SILICON;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the electrical modeling of thermo-mechanical delamination in TSVs, such as circumferential and interfacial cracks. Two-dimensional mechanical finite element models were built to analyze the stress distribution in TSV structures. Abaqus simulations were performed to compute the energy release rate at the crack when stress is applied and to track the propagation of cracks over different thermal cycles. The mechanical models were then translated to electrical defect models, to evaluate the electrical performance of TSVs with delaminations.

引用

页码：2298 / 2303

页数：6

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