Transfer ratio of the spin-valve transistor

被引：32

作者：

van 't Erve, OMJ ^{[1
]}

Vlutters, R ^{[1
]}

Kumar, PSA ^{[1
]}

Kim, SD ^{[1
]}

Postma, FM ^{[1
]}

Jansen, R ^{[1
]}

Lodder, JC ^{[1
]}

机构：

[1] Univ Twente, Res Inst, MESA, NL-7500 AE Enschede, Netherlands

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 20期

关键词：

D O I：

10.1063/1.1480889

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We describe the factors that control the transfer ratio of the spin-valve transistor. An increase in transfer ratio is obtained by a systematic variation of the height of emitter and collector Schottky barrier, and of the nonmagnetic metals. Next, we found that in some cases, a thicker base leads to a higher transfer ratio. Finally, the thickness of the magnetic layers in the Ni80Fe20/Au/Co spin-valve base can be optimized for a maximum absolute change of collector current. An overall increase by a factor of 24 was achieved, without loss of the magnetocurrent. (C) 2002 American Institute of Physics.

引用

页码：3787 / 3789

页数：3

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