High-temperature transport properties of 2DEG AlGaN/GaN heterostructures

被引:26
作者
Tao, YQ [1 ]
Chen, DJ
Kong, YC
Shen, B
Xie, ZL
Han, P
Zhang, R
Zheng, YD
机构
[1] Nanjing Univ, Key Lab Adv Photon & Elect Mat, Dept Phys, Nanjing 210093, Peoples R China
[2] Peking Univ, State Key Lab Artificial Microstruct & Mesoscop P, Sch Phys, Beijing 100871, Peoples R China
关键词
AlGaN/GaN heterostructure; 2DEG; transport properties;
D O I
10.1007/s11664-006-0128-7
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Transport properties of the two-dimensional electron gas (2DEG) in fully strained and partially strain-relaxed Al0.22Ga0.78N/GaN heterostructures at temperatures from 300 to 680 K have been investigated by Hall effect measurements. The 2DEG mobility was found to decrease rapidly with increasing temperature at the initial stage and then decrease slowly as temperature is further increased. Those features indicate strongly that the 2DEG mobility is primarily limited by LO phonon scattering processes at high temperatures. Meanwhile, the calculated results show that more electrons transfer to the higher-order sub-bands with increasing temperature, and hence the effect of screening on LO phonon scattering is weakened and the alloy scattering of the AlGaN layer on the 2DEG becomes stronger. Thus variation of 2DEG occupation in different sub-bands with increasing temperature also decreases mobility of the 2DEG.
引用
收藏
页码:722 / 725
页数:4
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