Error-Prediction LDPC and Error-Recovery Schemes for Highly Reliable Solid-State Drives (SSDs)

被引:68
作者
Tanakamaru, Shuhei [1 ,2 ]
Yanagihara, Yuki [2 ]
Takeuchi, Ken [1 ]
机构
[1] Chuo Univ, Dept Elect Elect & Commun Engn, Tokyo 1128551, Japan
[2] Univ Tokyo, Grad Sch Engn, Dept Elect Engn & Informat Syst, Tokyo 1138656, Japan
关键词
Error-correcting code (ECC); low-density parity-check code (LDPC); NAND controller; NAND flash memory; reliability; solid-state drive (SSD); TO-CELL INTERFERENCE; FLASH;
D O I
10.1109/JSSC.2013.2280078
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Highly reliable solid-state drives (SSDs) with error-prediction low-density parity-check (EP-LDPC) and error-recovery schemes are proposed. Since the reliability of the NAND flash memory of the SSD is seriously degraded as the scaling, the conventional error-correction scheme is becoming useless. Thus, LDPC error-correcting code (ECC) is considered to be the next-generation ECC for SSD. However, many read cycles are required and the LDPC scheme consumes an unacceptably long read time. To solve this problem, the proposed EP-LDPC scheme realizes the 7x fewer sequential read cycles than the conventional LDPC scheme. Instead of reading repeatedly, the EP-LDPC scheme estimates errors from V-TH, write/erase cycles, data-retention time, and inter-cell coupling information. The bit error rate (BER) estimation is based on the prerecorded table which stores the relations among write/erase cycles, data-retention time, neighboring cell data, and BER. As a result, the acceptable data-retention time of the SSD increases by more than 10x. Additionally, the proposed error-recovery scheme is executed and reduces the bit error if the BER of the data exceeds the error-correction capability of EP-LDPC scheme. Program-disturb error-recovery pulse and data-retention error-recovery pulse reduce the BER of the NAND flash memory by 76% and 56%, respectively.
引用
收藏
页码:2920 / 2933
页数:14
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