As cluster array formation in GaAs grown by molecular-beam epitaxy at a low temperature and δ-doped with phosphorus

被引：8

作者：

Boitsov, A. V. ^{[1
]}

Bert, N. A. ^{[1
]}

Chaldyshev, V. V. ^{[1
]}

Preobrazhenskii, V. V. ^{[2
]}

Putyato, M. A. ^{[2
]}

Semyagin, B. R. ^{[2
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[2] Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia

来源：

SEMICONDUCTORS | 2009年 / 43卷 / 02期

基金：

俄罗斯基础研究基金会;

关键词：

SUPERLATTICE;

D O I：

10.1134/S1063782609020274

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

GaAs films delta-doped with phosphorus (one monolayer) were grown by molecular beam epitaxy at a temperature of 200A degrees C (LT-GaAs), isochronally annealed at 400, 500 or 600A degrees C, and studied by transmission electron microscopy. Analysis of the moir, fringes in the electron microscopy images of the clusters formed upon annealing revealed that their microstructure and orientation relationship correspond to the parameters of pure As clusters in GaAs; hence, there is no considerable incorporation of phosphorus from the matrix into the forming clusters during precipitation of excess As. Examination of the cluster's spatial distribution across the LT-GaAs films showed no variation in the cluster array's concentration near the P A degrees-layers for the used growth and annealing conditions. Thus, phosphorus, being introduced into a LT-GaAs film in the form of A degrees-layers, behaves as the isovalent Al impurity and differs from such isovalent impurities as In and Sb by the effect on the spatial distribution of As clusters.

引用

页码：266 / 268

页数：3

共 17 条

[1]

Bert N. A., 1993, Physics of the Solid State, V35, P1289

[2]

Bert NA, 1996, SEMICONDUCTORS+, V30, P988

[3] Enhanced arsenic excess in low-temperature grown GaAs due to indium doping [J].

Bert, NA ;

Chaldyshev, VV ;

Kunitsyn, AE ;

Musikhin, YG ;

Faleev, NN ;

Tretyakov, VV ;

Preobrazhenskii, VV ;

Putyato, MA ;

Semyagin, BR .

APPLIED PHYSICS LETTERS, 1997, 70 (23) :3146-3148

[4] Two-dimensional precipitation of As clusters due to indium delta-doping of GaAs films grown by molecular beam epitaxy at low temperature [J].

Bert, NA ;

Chaldyshev, VV ;

Faleev, NN ;

Kunitsyn, AE ;

Lubyshev, DI ;

Preobrazhenskii, VV ;

Semyagin, BR ;

Tretyakov, VV .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1997, 12 (01) :51-54

[5] Effect of isovalent doping with phosphorus on the cluster formation in gallium arsenide grown by molecular-beam epitaxy at a relatively low temperature [J].

Boitsov, A. V. ;

Bert, N. A. ;

Musikhin, Yu. G. ;

Chaldyshev, V. V. ;

Yagovkina, M. A. ;

Preobrazhenskii, V. V. ;

Putyato, M. A. ;

Semyagin, B. R. .

SEMICONDUCTORS, 2006, 40 (07) :758-762

[6] Local stresses induced by nanoscale As-Sb clusters in GaAs matrix [J].

Chaldyshev, VV ;

Bert, NA ;

Romanov, AE ;

Suvorova, AA ;

Kolesnikova, AL ;

Preobrazhenskii, VV ;

Putyato, MA ;

Semyagin, BR ;

Werner, P ;

Zakharov, ND ;

Claverie, A .

APPLIED PHYSICS LETTERS, 2002, 80 (03) :377-379

[7] Enhanced As-Sb intermixing of GaSb monolayer superlattices in low-temperature grown GaAs [J].

Chaldyshev, VV ;

Bert, NA ;

Musikhin, YG ;

Suvorova, AA ;

Preobrazhenskii, VV ;

Putyato, MA ;

Semyagin, BR ;

Werner, P ;

Gösele, U .

APPLIED PHYSICS LETTERS, 2001, 79 (09) :1294-1296

[8] Arsenic cluster superlattice in gallium arsenide grown by low-temperature molecular-beam epitaxy [J].

Chaldyshev, VV ;

Preobrazhenskii, VV ;

Putyato, MA ;

Semyagin, BR ;

Bert, NA ;

Kunitsyn, AE ;

Musikhin, YG ;

Tret'yakov, VV ;

Werner, P .

SEMICONDUCTORS, 1998, 32 (10) :1036-1039

[9] STRUCTURE AND ORIENTATION OF AS PRECIPITATES IN GAAS GROWN AT LOW-TEMPERATURE BY MOLECULAR-BEAM EPITAXY [J].

CLAVERIE, A ;

LILIENTALWEBER, Z .

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1992, 65 (04) :981-1002

[10]

GLAZOV VM, 1992, THERMODYNAMICS SEMIC

← 1 2 →