Improved Thermal Stability and Electrical Properties for Al-Sb-Te Based Phase-Change Memory

被引：11

作者：

Peng, Cheng ^{[1
,2
]}

Wu, Liangcai ^{[1
]}

Rao, Feng ^{[1
,2
]}

Song, Zhitang ^{[1
]}

Yang, Pingxiong ^{[2
]}

Cheng, Limin ^{[1
]}

Li, Juntao ^{[1
]}

Zhou, Xilin ^{[1
]}

Zhu, Min ^{[1
]}

Liu, Bo ^{[1
]}

Chu, Junhao ^{[2
]}

机构：

[1] Chinese Acad Sci, State Key Lab Funct Mat Informat & Nanotechnol La, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China

[2] E China Normal Univ, Dept Elect, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China

来源：

ECS SOLID STATE LETTERS | 2012年 / 1卷 / 02期

基金：

中国国家自然科学基金;

关键词：

RANDOM-ACCESS MEMORY; NUCLEATION; GROWTH; FILMS;

D O I：

10.1149/2.014202ssl

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Phase-change alloys AlSbTe were investigated for material and electrical properties. A peak crystallization temperature of 236 degrees C was found with 16.7 at.% Al doping Sb3Te (AST-16.7%), which showed a 10-year data retention temperature up to 131 degrees C and a melting point as low as 542 degrees C. The phase-change memory device based on AST-16.7% showed good reversible switching characteristics as operation time below 100 ns and low power consumption. Importantly, dramatically rapid SET operation with a shortest pulse width of 7 ns was achieved. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.014202ssl] All rights reserved.

引用

页码：P38 / P41

页数：4

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