Conductivity Degradation of 4H-SiC p-i-n Diode with In-Grown Stacking Faults

The electrical characteristics of 4H-SiC p-i-n diodes with 8H-type in-grown stacking faults are investigated. The 4H-SiC p-i-n diodes have epilayers with a low Z(1/2) center density formed by carbon implantation. The forward voltage drops of the 4H-SiC p-i-n diode with 8H-type in-grown stacking faults are larger than those of the 4H-SiC p-i-n diode without an 8H-type in-grown stacking fault. The differential on-resistance of the 4H-SiC p-i-n diode with 8H-type in-grown stacking faults is larger than the drift resistance of the drift layer calculated from the doping density and thickness of the drift layer. A large number of electrons are trapped at 8H-type in-grown stacking faults, and the effective carrier density decreases compared with the doping density. (C) 2013 The Japan Society of Applied Physics