Conductivity Degradation of 4H-SiC p-i-n Diode with In-Grown Stacking Faults

被引：9

作者：

Tanaka, Atsushi ^{[1
]}

Nakayama, Koji ^{[1
]}

Asano, Katsunori ^{[1
]}

Miyazawa, Tetsuya ^{[2
]}

Tsuchida, Hidekazu ^{[2
]}

机构：

[1] Kansai Elect Power Co Inc, Power Engn R&D Ctr, Amagasaki, Hyogo 6610974, Japan

[2] Cent Res Inst Elect Power Ind, Mat Sci Res Lab, Yokosuka, Kanagawa 2400196, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2013年 / 52卷 / 04期

基金：

日本学术振兴会;

关键词：

D O I：

10.7567/JJAP.52.04CP10

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electrical characteristics of 4H-SiC p-i-n diodes with 8H-type in-grown stacking faults are investigated. The 4H-SiC p-i-n diodes have epilayers with a low Z(1/2) center density formed by carbon implantation. The forward voltage drops of the 4H-SiC p-i-n diode with 8H-type in-grown stacking faults are larger than those of the 4H-SiC p-i-n diode without an 8H-type in-grown stacking fault. The differential on-resistance of the 4H-SiC p-i-n diode with 8H-type in-grown stacking faults is larger than the drift resistance of the drift layer calculated from the doping density and thickness of the drift layer. A large number of electrons are trapped at 8H-type in-grown stacking faults, and the effective carrier density decreases compared with the doping density. (C) 2013 The Japan Society of Applied Physics

引用

页数：4

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