Is memristor a dynamic element?

被引：16

作者：

Bao, B. C. ^{[1
]}

Liu, Z. ^{[2
]}

Leung, H. ^{[3
]}

机构：

[1] Changzhou Univ, Sch Informat Sci & Engn, Changzhou 213164, Jiangsu, Peoples R China

[2] Nanjing Univ Sci & Technol, Dept Elect Engn, Nanjing 210094, Jiangsu, Peoples R China

[3] Univ Calgary, Dept Elect Engn, Calgary, AB T2N 1N4, Canada

来源：

ELECTRONICS LETTERS | 2013年 / 49卷 / 24期

基金：

中国国家自然科学基金;

关键词：

memristors; memristor; dynamic element; complementary basic physical attributes; elementary circuit elements; electrical circuit laws; constitutive relations; fundamental circuit elements; dynamic equations; dynamic circuits;

D O I：

10.1049/el.2013.2788

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Recently, it was found that flux phi and charge q are a pair of complementary basic physical attributes generating elementary circuit elements. With such a finding, two basic electrical circuit laws and constitutive relations of three fundamental circuit elements are rebuilt, upon which new dynamical equations describing dynamical circuits containing memristors are established. This leads to investigation of whether the memristor is a dynamic element.

引用

页码：1523 / 1524

页数：2

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