An attempt to replace an anion in CMR oxide:: Nitrogen implantation in La0.75Ca0.25MnO3

被引:3
作者
Lanke, UD [1 ]
机构
[1] Univ Pune, Ctr Adv Studies Mat Sci & Solid State Phys, Dept Phys, Pune 411007, Maharashtra, India
关键词
CMR; oriented; laser ablation; ion implantation;
D O I
10.1016/S0168-583X(99)00238-4
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Highly oriented La0.75Ca0.25MnO3 (LCMO) films have been deposited by pulsed excimer laser ablation technique on (0 0 1) LaAlO3 substrates. These films were implanted with 100 keV nitrogen ions at a dose of 5 x 10(16) ions/cm(2). The implanted films were then annealed at an elevated temperature for 10 h in nitrogen ambient. It is seen that high-dose nitrogen implantation-annealing leads to an increase in the resistivity value over the entire temperature range and reduction in Colossal Magnetoresistance (CMR) peak value. Interestingly, I am getting an additional peak in the resistance as well as CMR versus temperature curves at 140 and 120 K, respectively. The main objective of this work was to synthesize the nitride phase of LCMO compound by the ion-beam technique. The samples were characterized using the X-ray diffraction (XRD) technique and resistance versus temperature measurements with and without magnetic field. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:85 / 90
页数:6
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