Sol-Gel derived epitaxial MgTiO3 thin films

被引:29
作者
Lee, J [1 ]
Choi, CW [1 ]
机构
[1] Sungkyunkwan Univ, Dept Mat Engn, Suwon 440746, South Korea
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 6A期
关键词
MgTiO3; sol-gel; thin films; ilmenite structure; epitaxial growth;
D O I
10.1143/JJAP.38.3651
中图分类号
O59 [应用物理学];
学科分类号
摘要
MgTiO3 thin films have been successfully grown on a sapphire crystal by the sol-gel process. Epitaxial growth of MgTiO3 thin films was obtained using magnesium acetylacetonate and titanium isopropoxide in the sol-gel process. In nonhydrolytic conditions, the c-axis oriented ilmenite structure of MgTiO3 thin films developed at the crystallization temperatures 650-800 degrees C with a 3-fold axis symmetry in the c-plane. These epitaxial MgTiO3 thin films had extremely fine features in morphology, i.e., a line grain size of 10-20 nm and a very smooth surface of 0.9 nm rms roughness. The epitaxial MgTiO3 thin films exhibited a UV absorption edge at 280 nm and were transparent in the wavelength range of 400-1100 nm. The ordinary refractive index of the epitaxially grown MgTiO3 thin films was 2.305. very close to the value of single-crystal MgTiO3. This suggests that the epitaxially grown MgTiO3 thin Films are well crystallized and sufficiently strain-relaxed due to the small lattice mismatch with Al2O3 substrate.
引用
收藏
页码:3651 / 3654
页数:4
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