Growth of co nanostructures on Cu(110): Atomic-scale simulations

被引：17
作者：
Stepanyuk, Oleg V. [1 ]
Negulyaev, Nikolay N. [2 ]
Saletsky, Alexander M. [1 ]
Hergert, Wolfram [2 ]
机构：
[1] Moscow MV Lomonosov State Univ, Fac Phys, Moscow 119899, Russia
[2] Univ Halle Wittenberg, Fachbereich Phys, D-06099 Halle, Germany
来源：
PHYSICAL REVIEW B | 2008年 / 78卷 / 11期
关键词：
D O I：
10.1103/PhysRevB.78.113406
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Performing atomic-scale simulations we study the growth of Co on Cu(110) in the early stages of heteroepitaxy. The energetics of various diffusion processes relevant for this system is investigated. We reveal that the interface intermixing occurs at room temperature. Our results lead to the conclusion that Cu nanoislands grow on top of embedded Co adatoms in the submonolayer regime.
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