Junction investigation of graphene/silicon Schottky diodes

被引：79

作者：

Mohammed, Muatez ^{[1
]}

Li, Zhongrui ^{[1
]}

Cui, Jingbiao ^{[1
]}

Chen, Tar-pin ^{[1
]}

机构：

[1] Univ Arkansas, Dept Phys & Astron, Little Rock, AR USA

来源：

NANOSCALE RESEARCH LETTERS | 2012年 / 7卷

基金：

美国国家科学基金会;

关键词：

Graphene; heterojunction; Schottky diode; RAMAN-SPECTROSCOPY; FILMS; GRAPHITE; LAYER;

D O I：

10.1186/1556-276X-7-302

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Here we present a facile technique for the large-scale production of few-layer graphene flakes. The as-sonicated, supernatant, and sediment of the graphene product were respectively sprayed onto different types of silicon wafers. It was found that all devices exhibited current rectification properties, and the supernatant graphene devices have the best performance. Schottky junctions formed between graphene flakes and silicon n-type substrates exhibit good photovoltaic conversion efficiency while graphene/p-Si devices have poor light harvesting capability.

引用

页码：1 / 6

页数：6

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