Dispersion force for materials relevant for micro- and nanodevices fabrication

被引:52
作者
Gusso, A. [1 ]
Delben, G. J. [2 ]
机构
[1] Univ Estadual Santa Cruz, Dept Ciencias Exatas & Tecnol, BR-45662000 Ilheus, BA, Brazil
[2] Univ Fed Parana, Dept Fis, BR-81531990 Curitiba, Parana, Brazil
关键词
D O I
10.1088/0022-3727/41/17/175405
中图分类号
O59 [应用物理学];
学科分类号
摘要
The dispersion (van der Waals and Casimir) force between two semi-spaces is calculated using Lifshitz theory for different materials relevant for micro- and nanodevices fabrication, namely, gold, silicon, gallium arsenide, diamond and two types of diamond-like carbon, silicon carbide, silicon nitride and silicon dioxide. The calculations were performed using recent experimental optical data available in the literature, usually ranging from the far infrared up to the extreme ultraviolet bands of the electromagnetic spectrum. The results are presented in the form of a correction factor to the Casimir force predicted between perfect conductors, for the separation between the semi-spaces varying from 1 nm up to 1 mu m. The relative importance of the contributions to the dispersion force of the optical properties in different spectral ranges is analysed. The role of temperature in semiconductors and insulators is also addressed. The results are meant to be useful for the estimation of the impact of the Casimir and van der Waals forces on the operational parameters of micro- and nanodevices.
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页数:11
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共 44 条
[1]  
Adachi S., 1999, Optical Constants of Crystalline and Amorphous Semiconductors Numerical Data and Graphical Information, V1st ed.
[2]   Fabrication and characterization of 1.1 GHz blade nanoelectromechanical resonator [J].
Agache, V ;
Legrand, B ;
Collard, D ;
Buchaillot, L ;
Fujita, H .
APPLIED PHYSICS LETTERS, 2005, 86 (21) :1-3
[3]   DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV [J].
ASPNES, DE ;
STUDNA, AA .
PHYSICAL REVIEW B, 1983, 27 (02) :985-1009
[4]   Optical properties of SiO2 determined by reflection electron energy loss spectroscopy [J].
Bekhti, W ;
Ghamnia, A .
CATALYSIS TODAY, 2004, 89 (03) :303-306
[5]   Hamaker constants of inorganic materials [J].
Bergstrom, L .
ADVANCES IN COLLOID AND INTERFACE SCIENCE, 1997, 70 :125-169
[6]   New developments in the Casimir effect [J].
Bordag, M ;
Mohideen, U ;
Mostepanenko, VM .
PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS, 2001, 353 (1-3) :1-205
[7]   Metastability and the Casimir effect in micromechanical systems [J].
Buks, E ;
Roukes, ML .
EUROPHYSICS LETTERS, 2001, 54 (02) :220-226
[8]  
Bushan Bharat, 2004, SPRINGER HDB NANOTEC
[9]  
Butt H.-J., 2006, PHYS CHEM INTERFACES
[10]   Self-sustained bridges of a-SIC:H films obtained by PECVD at low temperatures for MEMS applications [J].
Carreño, MNP ;
Lopes, AT .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 2004, 338 :490-495