Effect of Ga predeposition layer on the growth of GaAs on vicinal Ge(001)

被引：6

作者：

Gutakovsky, AK ^{[1
]}

Katkov, AV ^{[1
]}

Katkov, MI ^{[1
]}

Pchelyakov, OP ^{[1
]}

Revenko, MA ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Semicond Phys, Novosibirsk 630090, Russia

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 201卷

关键词：

molecular beam epitaxy; anti-phase domains; vicinal surfaces; GaAs;

D O I：

10.1016/S0022-0248(98)01328-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report a detailed study of molecular beam epitaxial growth of GaAs films on vicinal Ge(0 0 1). Reflection high-energy electron diffraction was used to examine the atomic structures of the epitaxial surfaces. By using RHEED technique we show that clean Ge(OO 1) vicinal surface has (1 x 2) single-domain reconstruction and consists of double-layer steps. After the deposition of Ga submonolayer coverage, transformation from double to single-layer stepped surface was observed. Transmission electron microscopy reveals a high density of anti-phase domains in the GaAs epitaxial films grown on single-stepped Ga covered Ge(0 0 1) vicinal surfaces and anti-phase domain free GaAs was grown on a double-layer stepped clean Ge(0 0 1). (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：232 / 235

页数：4

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