Fabrication of planar heterojunction oxide solar cells by radio frequency magnetron sputtering

被引:8
作者
Vengatesh, P. [1 ]
Kumar, C. Karthik [1 ]
Shyju, T. S. [1 ,2 ,3 ]
Kuppusami, P. [1 ,2 ]
机构
[1] Sathyabama Inst Sci & Technol, Ctr Excellence Energy Res, Madras 600119, Tamil Nadu, India
[2] Sathyabama Inst Sci & Technol, Ctr Nanosci & Nanotechnol, Madras 600119, Tamil Nadu, India
[3] Univ Concepcion, Fac Phys & Math Sci, Dept Phys, Post Box 160-C, Concepcion, Chile
关键词
Oxide solar cells; Magnetron sputtering; Power conversion efficiency; EFFICIENCY; STABILITY;
D O I
10.1016/j.matlet.2018.03.037
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this study, planar heterojunction oxide solar cells (PHOSC) in both (p-i-n) and (n-i-p) configurations are fabricated using the radio frequency (RF) magnetron sputtered tin oxide (SnO2), copper (II) oxide (CuO) and nickel oxide (NiO) as n-type, absorber and p-type layers, respectively. XRD analysis confirmed the formation of tetragonal SnO2, monoclinic CuO, and cubic NiO phases. The cross-sectional SEM analysis showed the columnar growth for the sputtered metal oxide layers and XPS analysis revealed the valence states of metal oxides. Optical bandgap of n-type, absorber and p-type layers were found to be 3.7, 1.2 and 3.5 eV, respectively which leads to a staircase arrangement in the energy level alignment. The fabricated device with 600 nm thickness shows power conversion efficiency (PCE) (eta) of 2.3% with enhanced open-circuit voltage (V-oc) = 0.75 V, short-circuit current density (J(sc)) = 5.73 mA/cm(2) and fill factor (FF) of about 54% for (n-i-p) configuration. Similarly for (p-i-n) configuration, (eta) of 0.4% is achieved with decreased J(sc). This new strategy paves the way for easier, stable and large scale fabrication of planar oxide solar cells. (C) 2018 Elsevier B.V. All rights reserved.
引用
收藏
页码:197 / 200
页数:4
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