GaBiAs: A material for optoelectronic terahertz devices

被引：139
作者：
Bertulis, K.
Krotkus, A.
Aleksejenko, G.
Pacebutas, V.
Adomavicius, R.
Molis, G.
Marcinkevicius, S.
机构：
[1] Semicond Phys Inst, LT-01108 Vilnius, Lithuania
[2] Royal Inst Technol, Dept Microelect & Informat Technol, S-16440 Kista, Sweden
来源：
APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 20期
关键词：
D O I：
10.1063/1.2205180
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
GaBiAs layers have been grown by molecular beam epitaxy at low (270-330 degrees C) temperatures and were characterized by several experimental techniques. It was shown that the spectral photosensitivity cutoff wavelength reaches similar to 1.4 mu m when the growth temperature is as low as 280 degrees C. Optical pump-terahertz probe measurements made on these layers have evidenced that the electron trapping time decreases with decreasing growth temperature from 20 to about 1 ps. GaBiAs layers were used for manufacturing photoconductive terahertz emitters and detectors, which, when excited with Ti:sapphire laser pulses, have demonstrated a signal bandwidth of 3 THz. (c) 2006 American Institute of Physics.
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