Optical response and excitons in gapped graphene

被引：80

作者：

Pedersen, Thomas G. ^{[1
]}

Jauho, Antti-Pekka ^{[2
,3
]}

Pedersen, Kjeld ^{[1
]}

机构：

[1] Univ Aalborg, Dept Phys & Nanotechnol, DK-9220 Aalborg, Denmark

[2] Tech Univ Denmark, Dept Micro & Nanotechnol, DTU Nanotech, DK-2800 Kongens Lyngby, Denmark

[3] Helsinki Univ Technol, Phys Lab, Espoo 02015, Finland

来源：

PHYSICAL REVIEW B | 2009年 / 79卷 / 11期

关键词：

binding energy; carbon; elemental semiconductors; energy gap; excitons; nanostructured materials; optical conductivity; SEMICONDUCTORS;

D O I：

10.1103/PhysRevB.79.113406

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Graphene can be rendered semiconducting via energy gaps introduced in a variety of ways, e.g., coupling to substrates, electrical biasing, or nanostructuring. To describe and compare different realizations of gapped graphene we propose a simple two-band model in which a "mass" term is responsible for the gap. The optical conductivity predicted for this model is obtained as a simple closed-form expression. In addition, analytical estimates for the binding energy of excitons are derived and the impact of excitons on the optical response is analyzed.

引用

页数：4

共 19 条

[1] Screening effect and impurity scattering in monolayer graphene [J].

Ando, Tsuneya .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 2006, 75 (07)

[2] Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics [J].

Berger, C ;

Song, ZM ;

Li, TB ;

Li, XB ;

Ogbazghi, AY ;

Feng, R ;

Dai, ZT ;

Marchenkov, AN ;

Conrad, EH ;

First, PN ;

de Heer, WA .

JOURNAL OF PHYSICAL CHEMISTRY B, 2004, 108 (52) :19912-19916

[3] Ultrahigh electron mobility in suspended graphene [J].

Bolotin, K. I. ;

Sikes, K. J. ;

Jiang, Z. ;

Klima, M. ;

Fudenberg, G. ;

Hone, J. ;

Kim, P. ;

Stormer, H. L. .

SOLID STATE COMMUNICATIONS, 2008, 146 (9-10) :351-355

[4] Biased bilayer graphene: Semiconductor with a gap tunable by the electric field effect [J].

Castro, Eduardo V. ;

Novoselov, K. S. ;

Morozov, S. V. ;

Peres, N. M. R. ;

Dos Santos, J. M. B. Lopes ;

Nilsson, Johan ;

Guinea, F. ;

Geim, A. K. ;

Castro Neto, A. H. .

PHYSICAL REVIEW LETTERS, 2007, 99 (21)

[5]

Dresselhaus G., 1998, PHYS PROPERTIES CARB

[6] Electron beam nanosculpting of suspended graphene sheets [J].

Fischbein, Michael D. ;

Drndic, Marija .

APPLIED PHYSICS LETTERS, 2008, 93 (11)

[7] The rise of graphene [J].

Geim, A. K. ;

Novoselov, K. S. .

NATURE MATERIALS, 2007, 6 (03) :183-191

[8] Polarization charge distribution in gapped graphene: Perturbation theory and exact diagonalization analysis [J].

Kotov, Valeri N. ;

Pereira, Vitor M. ;

Uchoa, Bruno .

PHYSICAL REVIEW B, 2008, 78 (07)

[9] Chemically derived, ultrasmooth graphene nanoribbon semiconductors [J].

Li, Xiaolin ;

Wang, Xinran ;

Zhang, Li ;

Lee, Sangwon ;

Dai, Hongjie .

SCIENCE, 2008, 319 (5867) :1229-1232

[10] Dynamic dielectric response and electron-energy-loss spectra of individual single-walled BN nanotubes [J].

Margulis, Vl. A. ;

Muryumin, E. E. ;

Gaiduk, E. A. .

PHYSICAL REVIEW B, 2008, 77 (03)

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