Nanocrystalline Diamond-Gated AlGaN/GaN HEMT

被引：18

作者：

Anderson, Travis J. ^{[1
]}

Koehler, Andrew D. ^{[1
]}

Hobart, Karl D. ^{[1
]}

Tadjer, Marko J. ^{[1
]}

Feygelson, Tatyana I. ^{[1
]}

Hite, Jennifer K. ^{[1
]}

Pate, Bradford B. ^{[1
]}

Kub, Francis J. ^{[1
]}

Eddy, Charles R., Jr. ^{[1
]}

机构：

[1] Naval Res Lab, Washington, DC 20375 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2013年 / 34卷 / 11期

关键词：

Gallium nitride (GaN); high-electron-mobility transistor (HEMT); nanocrystalline diamond;

D O I：

10.1109/LED.2013.2282968

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Boron-doped p(+) nanocrystalline diamond (NCD) films are implemented as heat spreading gate contacts to AlGaN/GaN high-electron-mobility transistors. This device demonstrates a reduced ON-resistance, reduced gate leakage, and significantly increased ON-state current density compared with the reference Ni/Au-gated devices from the same wafer. The NCD gate electrode is thermally stable, chemically stable, optically transparent, and places a heat spreading film in direct contact with the gate edge, which is the hottest part of the device.

引用

页码：1382 / 1384

页数：3

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