Influence of the nucleation layer morphology on the structural property of AlN films grown on c-plane sapphire by MOCVD

被引：39

作者：

Luo, Weike ^{[1
,2
]}

Li, Liang ^{[1
]}

Li, Zhonghui ^{[1
]}

Yang, Qiankun ^{[1
]}

Zhang, Dongguo ^{[1
]}

Dong, Xun ^{[1
]}

Peng, Daqing ^{[1
]}

Pan, Lei ^{[1
]}

Li, Chuanhao ^{[1
]}

Liu, Bin ^{[2
]}

Zhong, Rong ^{[2
]}

机构：

[1] Nanjing Elect Devices Inst, Sci & Technol Monolith Integrated Circuits & Modu, Nanjing 210016, Jiangsu, Peoples R China

[2] Nanjing Univ, Sch Elect Sci & Engn, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Nanjing 210093, Jiangsu, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2017年 / 697卷

基金：

国家高技术研究发展计划(863计划); 中国国家自然科学基金;

关键词：

Nucleation islands; Surface morphology; Atomic force microscopy; Metalorganic chemical vapor deposition; Aluminum nitride; VAPOR-PHASE EPITAXY; HIGH-QUALITY; CRYSTALLINE QUALITY; BUFFER LAYER; TEMPERATURE; GAN; SURFACE; AIN; DEPOSITION; TEMPLATES;

D O I：

10.1016/j.jallcom.2016.12.126

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The influence of nucleation layer (NL) morphology on the structural property of AlN films grown by metal organic chemical vapor deposition (MOCVD) has been investigated using atomic force microscopy (AFM). It is found that the initial V/III ratio of the NL effectively controls the polarity, size, density, and coalescence rate of the islands, which is one of the most critical parameters determining the crystalline polarity and surface morphology. Due to difference adatom diffusion on the growth surfaces, it is observed that AlN films grown under high initial V/III ratios exhibit N polarity with rough surface, while that grown under low initial V/III ratios show Al polarity with smooth surface. And high quality crack-free AIN film with thickness about 1.4 mu m has been obtained by optimizing initial V/III ratios during the NL deposition stage. (C) 2016 Elsevier B. V. All rights reserved.

引用

页码：262 / 267

页数：6

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