Effect of radial energy distribution on ion track etching in amorphous metallic Fe81B13.5Si3.5C2

被引：21
作者：
Trautmann, C
Toulemonde, M
Dufour, C
Paumier, E
机构：
[1] CEA & CNRS,CTR INTERDISCIPLINAIRE RECH IONS LOURDS,LAB MIXTE,F-14040 CAEN,FRANCE
[2] INST SCI MAT & RAYONNEMENT,LERMAT,F-14032 CAEN,FRANCE
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1996年 / 108卷 / 1-2期
关键词：
D O I：
10.1016/0168-583X(95)00857-8
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The influence of the radial energy distribution on the formation of ion tracks is investigated by track etching in amorphous metallic Fe81B13.5Si3.5C2. An etching threshold of almost 4 keV/Angstrom is observed for high energy ions (Au, 35 MeV/u), which is slightly higher than the threshold of 3.6 keV/Angstrom of low energy ions (Xe, 6.1 MeV/u). In the frame of the thermal-spike model, the track radius is calculated as a function of the ion energy loss. For a given energy loss, the model predicts a small increase of the etching threshold as a function of the ion energy, in agreement with the experimental results.
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页码：94 / 98
页数：5
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