On the sensitivity limit of positron annihilation: detection of vacancies in as-grown silicon

被引：28

作者：

Gebauer, J ^{[1
]}

Rudolf, F

Polity, A

Krause-Rehberg, R

Martin, J

Becker, P

机构：

[1] Univ Halle Wittenberg, Fachbereich Phys, D-06099 Halle, Germany

[2] Phys Tech Bundesanstalt, Fachbereich Expt Forschungsschwerpunkte, D-38116 Braunschweig, Germany

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1999年 / 68卷 / 04期

关键词：

D O I：

10.1007/s003390050915

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Vacancy defects in as-grown silicon were observed by positron annihilation. We found a low density of vacancies in float-zone (FZ) silicon, either undoped or lightly nitrogen doped. In contrast, vacancies were less numerous in different Czochralski-grown samples. To obtain a quantitative calibration, electron irradiation with low doses was performed. A vacancy concentration of 1-4 x 10(14) cm(-3) in FZ-Si was obtained.

引用

页码：411 / 416

页数：6

共 50 条

[41] Observation of native Ga vacancies in GaN by positron annihilation [J].

Saarinen, K ;

Laine, T ;

Kuisma, S ;

Nissila, J ;

Hautojarvi, P ;

Dobrzynski, L ;

Baranowski, JM ;

Pakula, K ;

Stepniewski, R ;

Wojdak, M ;

Wysmolek, A ;

Suski, T ;

Leszczynski, M ;

Grzegory, I ;

Porowski, S .

PHYSICAL REVIEW LETTERS, 1997, 79 (16) :3030-3033

[42] Observation of native Ga vacancies in GaN by positron annihilation [J].

Saarinen, K ;

Laine, T ;

Kuisma, S ;

Nissila, J ;

Hautojarvi, P ;

Dobrzynski, L ;

Baranowski, JM ;

Pakula, K ;

Stepniewski, R ;

Wojdak, M ;

Wysmolek, A ;

Suski, T ;

Leszczynski, M ;

Grzegory, I ;

Porowski, S .

NITRIDE SEMICONDUCTORS, 1998, 482 :757-762

[43] OXIDE MICROPRECIPITATES IN AS-GROWN CZ SILICON [J].

INOUE, N ;

OOSAKA, J ;

WADA, K .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) :C365-C366

[44] Atomic vacancies in quasicrystals - a study by positron annihilation spectroscopy [J].

Baier, F ;

Schaefer, HE .

JOURNAL OF ALLOYS AND COMPOUNDS, 2002, 342 (1-2) :318-320

[45] Vacancies and vacancy defects in Si observed by positron annihilation [J].

Hautojarvi, P ;

Saarinen, K ;

Makinen, J ;

Corbel, C .

DEFECT AND DIFFUSION FORUM, 1998, 153 :97-110

[46] Positron annihilation in diamond, silicon and silicon carbide [J].

Dannefaer, S. .

Applied Physics A: Materials Science and Processing, 1995, 61 (01) :59-63

[47] POSITRON-ANNIHILATION STUDIES OF PRODUCTION OF VACANCIES IN COPPER [J].

RICEEVANS, P ;

HLAING, T ;

REES, DB .

JOURNAL OF PHYSICS F-METAL PHYSICS, 1976, 6 (06) :1079-1089

[48] STUDIES OF VACANCIES AND DISLOCATIONS IN TIAL BY POSITRON-ANNIHILATION [J].

SHIRAI, Y ;

YAMAGUCHI, M .

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 1992, 152 (1-2) :173-181

[49] Migration of vacancies in deformed silver studied by positron annihilation [J].

Dryzek, J .

POSITRON ANNIHILATION: ICPA-11 - PROCEEDINGS OF THE 11TH INTERNATIONAL CONFERENCE ON POSITRON ANNIHILATION, KANSAS CITY, MISSOURI, USA, MAY 1997, 1997, 255-2 :533-535

[50] Hole and positron interaction with vacancies and p-type dopants in epitaxially grown silicon [J].

Isa, Fabio ;

Schmidt, Javier A. ;

Aghion, Stefano ;

Napolitani, Enrico ;

Isella, Giovanni ;

Ferragut, Rafael .

JOURNAL OF APPLIED PHYSICS, 2024, 135 (16)

← 1 2 3 4 5 →