On the sensitivity limit of positron annihilation: detection of vacancies in as-grown silicon

被引：28
|
作者：
Gebauer, J [1 ]
Rudolf, F
Polity, A
Krause-Rehberg, R
Martin, J
Becker, P
机构：
[1] Univ Halle Wittenberg, Fachbereich Phys, D-06099 Halle, Germany
[2] Phys Tech Bundesanstalt, Fachbereich Expt Forschungsschwerpunkte, D-38116 Braunschweig, Germany
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1999年 / 68卷 / 04期
关键词：
D O I：
10.1007/s003390050915
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Vacancy defects in as-grown silicon were observed by positron annihilation. We found a low density of vacancies in float-zone (FZ) silicon, either undoped or lightly nitrogen doped. In contrast, vacancies were less numerous in different Czochralski-grown samples. To obtain a quantitative calibration, electron irradiation with low doses was performed. A vacancy concentration of 1-4 x 10(14) cm(-3) in FZ-Si was obtained.
引用
收藏
页码：411 / 416
页数：6
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