Vibrations in binary and ternary topological insulators: First-principles calculations and Raman spectroscopy measurements

被引:83
作者
Chis, V. [1 ]
Sklyadneva, I. Yu. [1 ,2 ,3 ]
Kokh, K. A. [4 ]
Volodin, V. A. [5 ,6 ]
Tereshchenko, O. E. [5 ,6 ]
Chulkov, E. V. [1 ,7 ,8 ]
机构
[1] DIPC, ES-20018 Donostia San Sebastian, Basque Country, Spain
[2] Inst Strength Phys & Mat Sci, Tomsk 634021, Russia
[3] Tomsk State Univ, Tomsk 6340501, Russia
[4] SB RAS, Inst Geol & Mineral, Novosibirsk 630090, Russia
[5] Russian Acad Sci, Inst Semicond Phys, Novosibirsk 630090, Russia
[6] Novosibirsk State Univ, Novosibirsk 636090, Russia
[7] Univ Basque Country, Dept Fis Mat, Fac Ciencias Quim, ES-20080 Donostia San Sebastian, Basque Country, Spain
[8] Ctr Mixto CSIC UPV EHU, CFM Mat Phys Ctr MPC, Ctr Fis Mat, ES-20018 Donostia San Sebastian, Basque Country, Spain
关键词
BISMUTH TELLURIDE; STATES; SURFACE; BI2SE3; DENSITY; SB2TE3; BI2TE3;
D O I
10.1103/PhysRevB.86.174304
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Density-functional perturbation theory and Raman spectroscopy are used in the study of vibrations in bulk V2VI3 binary and ternary topological insulators as well as in ultrathin films composed of one and two quintuple layers. Full dispersion curves along the Brillouin zone symmetry directions are calculated and analyzed and the zone-center Raman active modes are compared to the experimental results. The calculations of the two quintuple layer films reveal modes that correspond to displacements of entire quintuple layer blocks. These modes have low frequencies and are Raman active. The phonon dispersion curves of one and two quintuple layer Bi2Se3 films are compared with recent helium atom scattering experiments [Phys. Rev. Lett. 107, 186102 (2011)].
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页数:12
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