Development and Application of Integrated Optical Sensors for Intense E-Field Measurement

被引：61
作者：
Zeng, Rong [1 ]
Wang, Bo [1 ]
Niu, Ben [1 ]
Yu, Zhanqing [1 ]
机构：
[1] Tsinghua Univ, State Key Lab Power Syst, Dept Elect Engn, Beijing 100084, Peoples R China
来源：
SENSORS | 2012年 / 12卷 / 08期
基金：
中国国家自然科学基金;
关键词：
electric field; E-field sensor; Pockels effect; integrated optics; INDUCED SENSITIVITY ENHANCEMENTS; MACH-ZEHNDER INTERFEROMETER; ELECTRIC-FIELD; ELECTROOPTIC SENSORS; LITHIUM-NIOBATE; DIRECTIONAL COUPLER; MODULATORS; BIAS; DISCHARGE; DESIGN;
D O I：
10.3390/s120811406
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
The measurement of intense E-fields is a fundamental need in various research areas. Integrated optical E-field sensors (IOESs) have important advantages and are potentially suitable for intense E-field detection. This paper comprehensively reviews the development and applications of several types of IOESs over the last 30 years, including the Mach-Zehnder interferometer (MZI), coupler interferometer (CI) and common path interferometer (CPI). The features of the different types of IOESs are compared, showing that the MZI has higher sensitivity, the CI has a controllable optical bias, and the CPI has better temperature stability. More specifically, the improvement work of applying IOESs to intense E-field measurement is illustrated. Finally, typical uses of IOESs in the measurement of intense E-fields are demonstrated, including application areas such as E-fields with different frequency ranges in high-voltage engineering, simulated nuclear electromagnetic pulse in high-power electromagnetic pulses, and ion-accelerating field in high-energy physics.
引用
收藏
页码：11406 / 11434
页数：29
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