A TiSi2/Si heteronanocrystal memory operated with hot carrier injections

被引：2

作者：

Zhu, Yan ^{[1
]}

Liu, Jianlin ^{[2
]}

机构：

[1] Sipex Corp, San Jose, CA 95035 USA

[2] Univ Calif Riverside, Dept Elect Engn, Quantum Struct Lab, Riverside, CA 92521 USA

来源：

IEEE TRANSACTIONS ON NANOTECHNOLOGY | 2008年 / 7卷 / 03期

关键词：

flash memory; heteronanocrystal; nonvolatile memory; self-aligned; silicide;

D O I：

10.1109/TNANO.2008.917837

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The programming and erasing of a TiSi2/Si heteronanocrystal memory were carried out by channel hot electron injection and drain side hot hole injection, respectively. Compared to an Si nanocrystal memory, a TiSi2/Si heteronanocrystal memory exhibits much better writing/erasing efficiency and higher writing/erasing saturation level. The retention transient process indicates that the TiSi2/Si heteronanocrystal memory has a very slow charge loss mechanism. The result of the localization of charge shows that a reverse read leads to a higher threshold voltage shift, which is almost not dependent on the amplitude of the read voltages.

引用

收藏

页码：305 / 307

页数：3

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