Radiation hardness of SiC based ions detectors for influence of the relative protons

被引：19

作者：

Ivanov, AM

Strokan, NB

Davydov, DV

Savkina, NS

Lebedev, AA

Mironov, YT

Riabov, GA

Ivanov, EM

机构：

[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] BP Konstantinov St Petersburg Inst Nucl Phys, Gatchina 188350, Russia

来源：

APPLIED SURFACE SCIENCE | 2001年 / 184卷 / 1-4期

关键词：

radiation hardness; irradiation; alpha-spectrometry; carrier transport; deep levels;

D O I：

10.1016/S0169-4332(01)00529-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Nuclear detector radiation hardness is very important for key experiments in high-energy physics, where the irradiation fluence of relativistic particles can be as high as 10(15) cm(-2). In this work, we investigate the radiation hardness of SiC Schottky diode detectors phi 600 mum, obtained by magnetron sputtering of Ni on surface of 6H-SiC films, grown by sublimation epitaxy in vacuum. Irradiation has been performed using 1 GeV protons, Detector characteristics were tested by a-particles from a Cm-244 source (5.79 MeV). Investigation of the detector parameters (diffusion length, radiation- induced defects concentration, thickness of the space charge region), before and after irradiation shows that, up to a fluence of 3 x 10(14) cm(-2), the device degradation is at a beginning stage. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：431 / 436

页数：6

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