Investigation of the nonlinearity properties of the DC I-V characteristics of metal-insulator-metal (MIM) tunnel diodes with double-layer insulators

被引：9
|
作者：
Hegyi, Barnabas [1 ]
Csurgay, Arpad [1 ]
Porod, Wolfgang [2 ]
机构：
[1] Pter Pazmany Catholic Univ, Fac Informat Technol, H-1083 Budapest, Hungary
[2] Univ Notre Dame, Dept Elect Engn, Ctr Nano Sci & Technol, Notre Dame, IN 46556 USA
来源：
JOURNAL OF COMPUTATIONAL ELECTRONICS | 2007年 / 6卷 / 1-3期
基金：
匈牙利科学研究基金会;
关键词：
MIM diode; Tunneling theory; Computer simulation; DC I-V characteristics; Double insulator layer;
D O I：
10.1007/s10825-006-0083-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The DC I-V characteristics of metal-insulator-metal (MIM) tunnel diodes with double insulator layer is investigated by means of computer simulations. Simulation results on the properties of the diode characteristics such as resistance and quality factor are presented in various diagrams and the dependences on the different diode parameters are discussed. The simulations algorithm applied is also described in brief.
引用
收藏
页码：159 / 162
页数：4
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