Charge transport mechanism of self-powered GaN p-i-n α-particle detector

被引：8

作者：

Geng, Xinlei ^{[1
]}

Xia, Xiaochuan ^{[1
]}

Liu, Jun ^{[1
]}

Cui, Xingzhu ^{[2
]}

Sun, Zhonghao ^{[1
]}

Huang, Huishi ^{[3
]}

Xue, Dongyang ^{[1
]}

Liang, Xiaohua ^{[2
]}

Meng, Xiangcheng ^{[2
]}

Liang, Hongwei ^{[1
]}

机构：

[1] Dalian Univ Technol, Sch Microelect, Dalian 116024, Peoples R China

[2] Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China

[3] Jiangsu Xinguanglian Technol Co Ltd, Wuxi 214192, Jiangsu, Peoples R China

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2020年 / 143卷

基金：

美国国家科学基金会;

关键词：

alpha-particle detector; GaN; p-i-n; Hole diffusion; CARRIER DIFFUSION LENGTH;

D O I：

10.1016/j.spmi.2020.106563

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In this paper, a model based on charge collection efficiency (CCE) has been developed to investigate the charge transport mechanism of self-powered GaN p-i-n alpha-particle detector. To validate the model, a GaN p-i-n alpha-particle detector with 20 mu m unintentionally doped layer was fabricated and irradiated by 5.48 MeV alpha particles. The contribution of hole diffusion to CCE was observed to be 17% at zero bias and slightly decreased to 14% at a reverse voltage of 10 V. The consistency between the experimental result and theoretical calculation demonstrates that charge transport mechanism is dominated by hole diffusion of non-depleted region. This work proves the appreciable advantage of GaN p-i-n detectors to detect alpha particles even without external power supply.

引用

页数：8

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