Highly-Integrated <0.14 mm2 D-Band Receiver Front-Ends for Radar and Imaging Applications in a 130 nm SiGe BiCMOS Technology

被引：0
作者：
Aguilar, Erick [1 ]
Issakov, Vadim [2 ]
Weigel, Robert [3 ]
机构：
[1] Intel Deutschland, Campeon 10-12, D-85579 Neubiberg, Germany
[2] Infineon Technol AG, Campeon 1-15, D-85579 Neubiberg, Germany
[3] Univ Erlangen Nurnberg, Dept Tech Elect, Cauerstr 9, D-91058 Erlangen, Germany
来源：
2019 IEEE 19TH TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS (SIRF) | 2019年
关键词：
D-band; wideband receiver; radar; imaging; SiGe; active balun; passive balun; TRANSCEIVER;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Two low-power D-band receiver front-ends with competitive performance for radar and imaging applications are presented. The receivers include passive and active single-ended-to-differential converters realized as an ultra-compact Marchand-based balun and as a differential-pair-based active balun, respectively. The receivers achieve measured conversion gains (CG) of 24.9dB at 134GHz (active balun) and 20.27dB at 124GHz (passive balun) while consuming 425mW and 330mW correspondingly. A wide bandwidth of 32GHz is achieved for the active variant in the 114-146GHz frequency range while the passive approach achieves a CG>10dB in the 112-147GHz frequency range. The passive approach achieves a peak conversion gain of 20.27dB at 126GHz. The presented results offer competitive performance and compare favorably to reported receiver front-ends in terms of ultra-small silicon area (0.14 and 0.1mm(2)). The front-ends are suitable for integration in highly-integrated D-Band radar receiver arrays as well as for high-density imaging arrays.
引用
收藏
页码：37 / 40
页数：4
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