共 50 条
- [31] TRANSIENT ANNEALING OF ION-IMPLANTED SEMICONDUCTOR-MATERIALS NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 6 (1-2): : 307 - 315
- [32] MODULATED PHOTOREFLECTANCE CHARACTERIZATION OF ION-IMPLANTED SEMICONDUCTOR WAFERS APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1994, 58 (05): : 441 - 445
- [34] DISPERSION RELATION FOR LONGITUDINAL WAVES IN A RELATIVISTIC PLASMAS ZEITSCHRIFT FUR PHYSIK, 1970, 235 (01): : 66 - &
- [35] CHARACTERISTICS OF ION-IMPLANTED CONTACTS FOR NUCLEAR PARTICLE DETECTORS .I. WINDOW THICKNESS OF ION-IMPLANTED SEMICONDUCTOR DETECTORS NUCLEAR INSTRUMENTS & METHODS, 1969, 70 (03): : 279 - +
- [37] OPTICAL-ABSORPTION IN ION-IMPLANTED SI FILMS NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 96 (1-2): : 241 - 244
- [40] LASER PROCESSING OF ION-IMPLANTED SEMICONDUCTOR MATERIAL FOR DEVICE APPLICATIONS BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1980, 25 (07): : 774 - 775